The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2011
Filed:
Jan. 28, 2005
Applicants:
Harald Seidl, Pöring, DE;
Martin Gutsche, Dorfen, DE;
Shrinivas Govindarajan, Niskayuna, NY (US);
Inventors:
Assignee:
Qimonda AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
Abstract
Method for producing a dielectric material on a semiconductor device and semiconductor device Method for producing a dielectric material on semiconductor device with an atomic layer deposition procedure, whereby an aluminum oxide nitride or a silicon oxide nitride or an aluminum silicon oxide nitride layer is deposited comprising a rare earth metal-element. The invention describes a semiconductor device with a dielectric layer comprising aluminum oxide nitride or silicon oxide nitride or an aluminum silicon oxide nitride comprising a rare earth metal element.