The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2007
Filed:
May. 10, 2005
Martin Gutsche, Dorfen, DE;
Harald Seidl, Pöring, DE;
Martin Gutsche, Dorfen, DE;
Harald Seidl, Pöring, DE;
Infineon Technologies AG, Munich, DE;
Abstract
The present invention provides a method for fabricating a capacitive element (), a substrate () being provided as a first electrode layer of the capacitive element (), the substrate () provided as an electrode layer is conditioned, a dielectric layer () is deposited on the conditioned substrate () and a second electrode layer () is applied on the layer stack produced, the layer stack being modified by a heat treatment in such a way that the dielectric layer () deposited on the conditioned substrate () forms a dielectric mixed layer () with a reaction layer () deposited on the dielectric layer (), which dielectric mixed layer has an increased dielectric constant (k) or an increased thermal stability.