The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2008
Filed:
Jul. 28, 2005
Martin Gutsche, Dorfen, DE;
Harald Seidl, Pöring, DE;
Martin Gutsche, Dorfen, DE;
Harald Seidl, Pöring, DE;
Infineon Technologies AG, Munich, DE;
Abstract
The present invention provides a fabrication method for a trench capacitor having an insulation collar () in a silicon substrate (), having the steps of: providing a trench () in the silicon substrate (); providing the insulation collar () in the upper trench region as far as the top side of the silicon substrate (); depositing a layer () made of a metal oxide in the trench (); carrying out a thermal treatment for selectively reducing the layer (), a region of the layer () that lies below the insulation collar () above the silicon substrate () being reduced and being converted into a first capacitor electrode layer () made of a corresponding metal silicide, and a region of the layer () that lies above the insulation collar () not being reduced; selectively removing the non-reduced region of the layer () that lies above the insulation collar (); providing a capacitor dielectric layer () in the trench () above the first capacitor electrode layer (); and providing a second capacitor electrode layer () in the trench () above the capacitor dielectric layer ().