The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2008
Filed:
Jul. 20, 2005
Rainer Bruchhaus, Munich, DE;
Martin Gutsche, Dorfen, DE;
Rainer Bruchhaus, Munich, DE;
Martin Gutsche, Dorfen, DE;
Infineon Technologies AG, Munich, DE;
Abstract
The invention provides a method for fabricating a memory device having memory cells which are formed on a microstructured driving unit (), in which method a shaping layer () is provided and is patterned in such a manner that vertical trench structures () are formed perpendicular to the surface of the driving unit (). Deposition of a seed layer () on side walls () of the trench structures () allows a crystallization agent () which has filled the trench structures (), during crystallization, to have grain boundaries perpendicular to electrode surfaces that are to be formed. This provides memory cells based on vertical ferroelectric capacitors in a chain FeRAM structure.