Martin D Giles

This inventor holds 34 USPTO granted patents and 2 published patent applications and 2 EPO patents, primarily in Nanowire Structures. Top assignees: Intel Corporation, Google Inc., Sony Corporation. Active years: 2005-2025.

USPTO Granted Patents = 34 (Patent Applications = 2)

% Patents Active = 73.5

EPO Patents = 2 (Patent Applications = 5)

Average Co-Inventor Count = 4.6

ph-index = 9

Forward Citations = 382(Granted Patents)

Location History:

Hillsboro, OR (US) (2006 - 2008)
Portland, OR (US) (2005 - 2023)

Company Filing History:

Sony Group Corporation

patents

Years Active: 2005-2025

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Areas of Expertise:

Nanowire Structures

Semiconductor Devices

Metal Oxide

Strain Engineering

Silicon Germanium

Trigate Devices

MOSFET

Capacitance Reduction

Uniaxially Strained

Etch Stop Layer

Transistor Performance

Complementary MOS

34 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12205955 - Fins for metal oxide semiconductor device structures (2025-01-21),

2. 12142634 - Silicon and silicon germanium nanowire structures (2024-11-12),

3. 12125916 - Nanowire structures having non-discrete source and drain regions (2024-10-22),

4. 11552197 - Nanowire structures having non-discrete source and drain regions (2023-01-10),

5. 10991799 - Silicon and silicon germanium nanowire structures (2021-04-27),

6. 10985184 - Fins for metal oxide semiconductor device structures (2021-04-20),

7. 10847653 - Semiconductor device having metallic source and drain regions (2020-11-24),

8. 10636871 - Silicon and silicon germanium nanowire structures (2020-04-28),

9. 10580899 - Nanowire structures having non-discrete source and drain regions (2020-03-03),

10. 9806193 - Stress in trigate devices using complimentary gate fill materials (2017-10-31),

11. 9680013 - Non-planar device having uniaxially strained semiconductor body and method of making same (2017-06-13),

12. 9607987 - Methods for forming fins for metal oxide semiconductor device structures (2017-03-28),

13. 9595581 - Silicon and silicon germanium nanowire structures (2017-03-14),

14. 9583487 - Semiconductor device having metallic source and drain regions (2017-02-28),

15. 9564522 - Nanowire structures having non-discrete source and drain regions (2017-02-07),

Title: Martin D Giles - A Pioneer of Innovation in Portland, Oregon

Introduction:

Martin D Giles is a trailblazing inventor based in Portland, Oregon, who has made significant contributions to the world of inventions. With 31 patents to his name, Giles continues to inspire others with his forward-thinking approach and groundbreaking ideas.

Latest Patents:

Giles's latest patents showcase his prowess in the field of nanowire structures. One of his notable inventions includes nanowire structures featuring non-discrete source and drain regions, revolutionizing the semiconductor industry. Another patent highlights his work on silicon and silicon germanium nanowire structures, showcasing his expertise in microelectronic technologies.

Career Highlights:

Throughout his career, Giles has worked with prestigious companies such as Intel Corporation and Sony Corporation. His innovative spirit and dedication to pushing the boundaries of technology have made him a valuable asset in these organizations, contributing to groundbreaking advancements in the field.

Collaborations:

Giles has had the privilege of collaborating with talented individuals such as Stephen M Cea and Kelin J Kuhn. Together, they have worked on various projects that have set new benchmarks for innovation and paved the way for future breakthroughs in the industry.

Conclusion:

In conclusion, Martin D Giles stands as a beacon of innovation in Portland, Oregon, inspiring others to think outside the box and push the boundaries of what is possible in the world of inventions. His groundbreaking patents and collaborative efforts underscore his significant impact on the field of technology, solidifying his legacy as a pioneering inventor.