The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2017
Filed:
Aug. 29, 2016
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Titash Rakshit, Hillsboro, OR (US);
Martin Giles, Portland, OR (US);
Ravi Pillarisetty, Portland, OR (US);
Jack T. Kavalieros, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 29/78 (2006.01); H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 27/12 (2006.01); H01L 21/84 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7845 (2013.01); H01L 21/8234 (2013.01); H01L 21/823807 (2013.01); H01L 21/823821 (2013.01); H01L 21/823828 (2013.01); H01L 21/823842 (2013.01); H01L 21/823878 (2013.01); H01L 21/845 (2013.01); H01L 27/0924 (2013.01); H01L 27/1211 (2013.01); H01L 29/0653 (2013.01); H01L 29/495 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7831 (2013.01);
Abstract
Embodiments relate to an improved tri-gate device having gate metal fills, providing compressive or tensile stress upon at least a portion of the tri-gate transistor, thereby increasing the carrier mobility and operating frequency. Embodiments also contemplate method for use of the improved tri-gate device.