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For the Inventor, By the Inventor

Hillsboro, OR, United States of America

Titash Rakshit

USPTO Granted Patents = 36 

 

Average Co-Inventor Count = 5.1

ph-index = 10

Forward Citations = 495(Granted Patents)


Company Filing History:

goldMedal34 out of 54,664 
 
Intel Corporation
 patents
silverMedal1 out of 3,416 
 
Sony Group Corporation
 patents
bronzeMedal1 out of 58,129 
 
Sony Corporation
 patents

Years Active: 2008-2024

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36 patents (USPTO):
1. 12142634 - Silicon and silicon germanium nanowire structures (2024-11-12),
2. 10991799 - Silicon and silicon germanium nanowire structures (2021-04-27),
3. 10636871 - Silicon and silicon germanium nanowire structures (2020-04-28),
4. 10084058 - Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains (2018-09-25),
5. 9806193 - Stress in trigate devices using complimentary gate fill materials (2017-10-31),
6. 9595581 - Silicon and silicon germanium nanowire structures (2017-03-14),
7. 9450092 - Stress in trigate devices using complimentary gate fill materials (2016-09-20),
8. 9443936 - Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains (2016-09-13),
9. 9224754 - Stress in trigate devices using complimentary gate fill materials (2015-12-29),
10. 9129829 - Silicon and silicon germanium nanowire structures (2015-09-08),
11. 9035387 - Multi-gate device (2015-05-19),
12. 8853741 - Junctionless accumulation-mode devices on decoupled prominent architectures (2014-10-07),
13. 8753942 - Silicon and silicon germanium nanowire structures (2014-06-17),
14. 8741733 - Stress in trigate devices using complimentary gate fill materials (2014-06-03),
15. 8618609 - Apparatus for improving multi-gate device performance (2013-12-31),

Title: Innovator Spotlight: Titash Rakshit from Hillsboro, OR

Introduction

Titash Rakshit is a prominent inventor based in Hillsboro, Oregon, who holds an impressive total of 36 patents. His work primarily focuses on microelectronic structures, pushing the boundaries of technology and innovation.

Latest Patents

Among his noteworthy contributions, Titash's latest patents involve "Silicon and Silicon Germanium Nanowire Structures." These patents describe methods of forming advanced microelectronic structures. The embodiments include forming a nanowire device that comprises a substrate with source/drain structures adjacent to spacers. Additionally, nanowire channel structures are disposed between the spacers, arranged in vertically stacked configurations. Through these innovations, Titash has significantly enhanced the capabilities of microelectronic devices.

Career Highlights

Titash has had a remarkable career, having worked with industry leaders such as Intel Corporation and Sony Corporation. His experience in these esteemed companies has undoubtedly contributed to his extensive knowledge and expertise in the field of microelectronics and nanotechnology.

Collaborations

In his journey, Titash has collaborated with talented professionals, including Ravi Pillarisetty and Jack T Kavalieros. These partnerships have allowed him to exchange ideas and develop groundbreaking technologies that have a lasting impact on the industry.

Conclusion

Titash Rakshit continues to be a significant force in the world of innovations and inventions. With his extensive portfolio of patents and valuable contributions to microelectronics, he is paving the way for future advancements in technology. His work exemplifies the spirit of innovation and the importance of collaboration in driving progress.

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