Boise, ID, United States of America

Martin Ceredig Roberts

This inventor holds 86 USPTO granted patents and 3 published patent applications and 5 EPO patents, primarily in Integrated Circuit Design (CPC class H01L27-11582). Top assignees: Micron Technology Incorporated, Micron Semiconductor, Inc.. Active years: 1991-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Martin Ceredig Roberts. Retrieved from https://idiyas.com/inventor/martin-ceredig-roberts

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 86 

% Patents Active = 90.7

 

Average Co-Inventor Count = 2.3

ph-index = 14

Forward Citations = 842(Granted Patents)

Forward Citations (Not Self Cited) = 759(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • New York City, New York County, NY (US) (2008)
  • Boise, ID (US) (1991 - 2024)

Company Filing History:


Years Active: 1991-2026

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Areas of Expertise:
Memory Arrays
Integrated Assemblies
Circuit Structures
Memory Circuitry
Programmable Charge Storage
Trench Isolation
Field Effect Transistors
Integrated Structures
Silicon Nitride Materials
Memory Cell Formation
Integrated Circuit Interconnects
Elevationally-Extending Strings
86 patents (USPTO):Explore Patents

Martin Ceredig Roberts is one of the most innovative inventors of Boise, ID. With 52 patents, he has made countless contributions to the world of technology. His latest patents include "Integrated assemblies and methods of forming integrated assemblies" and "Memory arrays comprising memory cells". These patents reflect his extensive knowledge and experience in developing semiconductor devices and memory arrays.

The integrated assembly patented by Roberts is designed with a semiconductor channel material that has a boundary region to interface with heavily-doped regions. This gating structure enables the semiconductor channel to regulate current flow, which is ideal for use in electronics and other devices. Additionally, the memory arrays developed by Roberts have vertically-stacked memory cells that efficiently store and retrieve data. These memory cells use a transistor coupled with a charge-storage device and channel material with a bandgap greater than 2 electron-volts.

Roberts works at Micron Technology Incorporated, a leading provider of advanced semiconductor memory products. Along with his notable patents, he has also worked collaboratively with coworkers such as Sanh D Tang and Kunal R Parekh on various breakthrough projects. Their teamwork has resulted in numerous technological advancements, which have been instrumental in shaping the future of technology.

In conclusion, Martin Ceredig Roberts is an exceptional inventor whose expertise has led him to make significant contributions to the world of semiconductor devices. His patents and collaborations are proof of his dedication and commitment to pushing the boundaries of technological innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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