The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2022
Filed:
Sep. 15, 2020
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Sanh D. Tang, Kuna, ID (US);
Martin C. Roberts, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/423 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 23/528 (2006.01); H01L 27/11507 (2017.01); H01L 49/02 (2006.01); H01L 27/06 (2006.01); H01L 29/78 (2006.01); H01L 21/265 (2006.01); H01L 27/11514 (2017.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/3213 (2006.01); H01L 21/306 (2006.01); H01L 27/11597 (2017.01);
U.S. Cl.
CPC ...
H01L 27/10805 (2013.01); H01L 23/528 (2013.01); H01L 27/0688 (2013.01); H01L 27/1085 (2013.01); H01L 27/10852 (2013.01); H01L 27/10858 (2013.01); H01L 27/10873 (2013.01); H01L 27/10882 (2013.01); H01L 27/11507 (2013.01); H01L 28/60 (2013.01); H01L 28/86 (2013.01); H01L 29/0847 (2013.01); H01L 29/1033 (2013.01); H01L 29/4236 (2013.01); H01L 29/42376 (2013.01); H01L 29/7827 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 21/26513 (2013.01); H01L 21/28088 (2013.01); H01L 21/30604 (2013.01); H01L 21/31111 (2013.01); H01L 21/32133 (2013.01); H01L 27/11514 (2013.01); H01L 27/11597 (2013.01);
Abstract
A memory array comprises vertically-alternating tiers of insulative material and memory cells. The memory cells individually comprise a transistor and a capacitor. One of (a) a channel region of the transistor, or (b) a pair of electrodes of the capacitor, is directly above the other of (a) and (b). Additional embodiments and aspects are disclosed.