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For the Inventor, By the Inventor

Merano, Italy

Maria Porrini

This inventor holds 10 USPTO granted patents and 4 published patent applications. Top assignees: Globalwafers Co., Ltd., Memc Electronic Materials, Inc.. Active years: 2004-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Maria Porrini. Retrieved from https://idiyas.com/inventor/maria-porrini

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 10 

% Patents Active = 100.0

Average Co-Inventor Count = 2.4

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:

goldMedal8 out of 315 
 
Globalwafers Co., Ltd.
 patents
silverMedal2 out of 347 
 
Memc Electronic Materials, Inc.
 patents

Years Active: 2004-2025

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10 patents (USPTO):Explore Patents
1. 12467877 - Methods for detecting defects in a single crystal silicon structure (2025-11-11),
2. 12398483 - Ingot puller apparatus having a flange that extends from the funnel or from the silicon feed tube (2025-08-26),
3. 12037698 - Ingot puller apparatus having a flange that extends from the funnel or from the silicon feed tube (2024-07-16),
4. 11987901 - Methods for forming a silicon substrate with reduced grown-in nuclei for epitaxial defects and methods for forming an epitaxial wafer (2024-05-21),
5. 11987900 - Methods for forming a silicon substrate with reduced grown-in nuclei for epitaxial defects and methods for forming an epitaxial wafer (2024-05-21),
6. 11987899 - Methods for preparing an ingot in an ingot puller apparatus and methods for selecting a side heater length for such apparatus (2024-05-21),
7. 11866845 - Methods for growing single crystal silicon ingots that involve silicon feed tube inert gas control (2024-01-09),
8. 11085128 - Dopant concentration control in silicon melt to enhance the ingot quality (2021-08-10),
9. 9359691 - Method of loading a charge of polysilicon into a crucible (2016-06-07),
10. 6803576 - Analytical method to measure nitrogen concentration in single crystal silicon (2004-10-12),

Title: Maria Porrini: Innovator in Silicon Ingot Technology

Introduction

Maria Porrini is a distinguished inventor based in Merano, Italy. She has made significant contributions to the field of silicon ingot technology, holding a total of nine patents. Her innovative work focuses on improving the processes involved in growing single crystal silicon ingots.

Latest Patents

Among her latest patents is an ingot puller apparatus featuring a flange that extends from the funnel or from the silicon feed tube. This invention aims to enhance methods for growing single crystal silicon ingots by controlling inert gas in the silicon feed tube. Additionally, her ingot puller apparatus includes a flange that extends radially from a silicon funnel or from a silicon feed tube, which helps to reduce backflow of gases from the silicon feed tube into the growth chamber.

Career Highlights

Maria has worked with notable companies in the semiconductor industry, including GlobalWafers Co., Ltd. and MEMC Electronic Materials, Inc. Her experience in these organizations has allowed her to develop and refine her innovative technologies.

Collaborations

Throughout her career, Maria has collaborated with esteemed colleagues such as Matteo Pannocchia and Paolo Collareta. These partnerships have contributed to her success and the advancement of her inventions.

Conclusion

Maria Porrini is a remarkable inventor whose work in silicon ingot technology has led to significant advancements in the field. Her patents and collaborations reflect her dedication to innovation and excellence.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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