The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2004
Filed:
Sep. 23, 2002
Applicant:
Inventors:
Maria Giovanna Pretto, Merano, IT;
Maria Porrini, Merano, IT;
Roberto Scala, Merano, IT;
Vladimir Voronkov, Merano, IT;
Paolo Collareta, Merano, IT;
Robert J. Falster, London, GB;
Assignee:
MEMC Electronic Materials, SPA, Novara, IT;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 2/117 ;
U.S. Cl.
CPC ...
G01N 2/117 ;
Abstract
The present invention is a method for quantitatively measuring nitrogen in Czochralski silicon based on the detection of one or more N—O complexes by means of low temperature Fourier Transform infrared spectroscopy (LT-FTIR) in the far infrared spectral range (FIR).
Pretto, Maria. (2004). Analytical method to measure nitrogen concentration in single crystal silicon (U.S. Patent No. 6803576). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6803576
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile