Company Filing History:
Years Active: 2004
Title: Maria Giovanna Pretto: Innovator in Silicon Nitrogen Measurement
Introduction
Maria Giovanna Pretto is an accomplished inventor based in Merano, Italy. She has made significant contributions to the field of semiconductor materials, particularly with a focus on measuring nitrogen concentrations in silicon crystals. Her innovative methods have the potential to improve the quality and performance of silicon used in various technological applications.
Latest Patents
Maria Giovanna Pretto holds one patent titled "Analytical Method to Measure Nitrogen Concentration in Single Crystal Silicon." This groundbreaking invention provides a systematic approach for quantitatively measuring nitrogen in Czochralski silicon. The method employs low temperature Fourier Transform infrared spectroscopy (LT-FTIR) to detect one or more nitrogen-oxygen complexes in the far infrared spectral range, paving the way for more precise control in semiconductor manufacturing.
Career Highlights
Maria is currently employed at MEMC Electronic Materials, Inc., a company known for its expertise in silicon wafers and related technologies. Her work has notably advanced the understanding and measurement techniques of nitrogen in single crystal silicon, which is essential for the development of high-performance electronic devices.
Collaborations
Throughout her career, Maria has worked alongside esteemed colleagues such as Maria Porrini and Roberto Scala. These collaborations have enriched her research efforts and fostered a dynamic environment for innovation within the field.
Conclusion
Maria Giovanna Pretto is a remarkable inventor whose contributions to the measurement of nitrogen in silicon are shaping the future of semiconductor technology. Her dedication to innovation and collaboration reflects her commitment to advancing the field and underscores the significance of her work in the industry.