The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
Jan. 29, 2024
Globalwafers Co., Ltd., Hsinchu, TW;
Armando Giannattasio, Lagundo, IT;
Fabrizio Nicolini, Merano, IT;
Silvana Zampieri, Merano, IT;
Maria Porrini, Merano, IT;
Moreno Lorenzino Morici, Cameri, IT;
GlobalWafers Co., Ltd., Hsinchu, TW;
Abstract
Methods for detecting defects in single crystal silicon structures doped with antimony, boron, arsenic or phosphorous are disclosed. The structure is immersed in an ultrasonic bath. The structure is contacted with a first etchant solution comprising nitric acid and hydrofluoric acid to form an etched surface. The etched surface is coated with a composition comprising a metal capable of diffusing through silicon to form a coated surface. The structure is annealed to diffuse the metal into a bulk region of the structure. The structure is contacted with a second etchant solution comprising nitric acid and hydrofluoric acid to delineate defects in the structure.