The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2021
Filed:
Sep. 10, 2019
Applicant:
Globalwafers Co., Ltd., Hsinchu, TW;
Inventor:
Maria Porrini, Merano, IT;
Assignee:
GlobalWafers Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/04 (2006.01); C30B 15/00 (2006.01); C30B 15/10 (2006.01); C30B 15/14 (2006.01); C30B 15/22 (2006.01); C30B 29/06 (2006.01); H01L 31/0288 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
C30B 15/04 (2013.01); C30B 15/002 (2013.01); C30B 15/10 (2013.01); C30B 15/14 (2013.01); C30B 15/22 (2013.01); C30B 29/06 (2013.01); H01L 31/0288 (2013.01); H01L 31/182 (2013.01);
Abstract
Methods for producing single crystal silicon ingots in which the dopant concentration in the silicon melt is controlled are disclosed. The control of the dopant concentration enhances ingot quality by the reduction or elimination of dislocations in the neck, crown, and main body portions of the single crystal silicon ingot.