The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2024
Filed:
Apr. 01, 2022
Applicant:
Globalwafers Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
GlobalWafers Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/06 (2006.01); C30B 15/00 (2006.01); C30B 15/04 (2006.01); C30B 15/14 (2006.01); C30B 15/20 (2006.01); C30B 29/66 (2006.01); C30B 25/10 (2006.01); C30B 25/20 (2006.01);
U.S. Cl.
CPC ...
C30B 29/06 (2013.01); C30B 15/007 (2013.01); C30B 15/04 (2013.01); C30B 15/14 (2013.01); C30B 15/203 (2013.01); C30B 29/66 (2013.01); C30B 25/10 (2013.01); C30B 25/20 (2013.01);
Abstract
Methods for preparing single crystal silicon substrates for epitaxial growth are disclosed. The methods may involve control of the (i) a growth velocity, v, and/or (ii) an axial temperature gradient, G, during the growth of an ingot segment such that v/G is less than a critical v/G and/or is less than a value of v/G that depends on the boron concentration of the ingot. Methods for preparing epitaxial wafers are also disclosed.