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For the Inventor, By the Inventor

Suwon-si, South Korea

Mansug Kang

USPTO Granted Patents = 10 

Average Co-Inventor Count = 3.7

ph-index = 4

Forward Citations = 51(Granted Patents)


Location History:

  • Hwaseong-si, KR (2015)
  • Hwasung, KR (2015)
  • Suwon-si, KR (2013 - 2017)

Company Filing History:

goldMedal10 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2013-2017

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10 patents (USPTO):Explore Patents
1. 9583440 - Semiconductor devices including metal-silicon-nitride patterns (2017-02-28),
2. 9147685 - Semiconductor memory devices including support patterns (2015-09-29),
3. 9118003 - Variable resistance memory devices and method of forming the same (2015-08-25),
4. 9111953 - Integrated circuit devices with capacitor and methods of manufacturing the same (2015-08-18),
5. 9099473 - Semiconductor devices including metal-silicon-nitride patterns (2015-08-04),
6. 8927389 - Semiconductor devices and methods of fabricating the same (2015-01-06),
7. 8883596 - Semiconductor device with vertical channel transistor and method of fabricating the same (2014-11-11),
8. 8835315 - Methods of fabricating semiconductor memory devices including support patterns (2014-09-16),
9. 8748263 - Methods of fabricating a semiconductor device comprising a conformal interfacial layer (2014-06-10),
10. 8614498 - Highly integrated semiconductor devices including capacitors (2013-12-24),

Title: The Innovative Contributions of Mansug Kang

Introduction

Mansug Kang is a prominent inventor based in Suwon-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 10 patents. His work has been instrumental in advancing the capabilities of semiconductor devices, particularly in memory technology.

Latest Patents

Mansug Kang's latest patents include innovative designs for semiconductor devices that incorporate metal-silicon-nitride patterns. One notable patent describes a semiconductor memory device featuring a first conductive line that crosses over both a field isolation region and an active region. This design includes a first conductive pattern, a second conductive pattern, and a metal-silicon-nitride pattern that serves as a contact and diffusion barrier. Another patent focuses on semiconductor memory devices that utilize support patterns, where a capacitor dielectric is positioned between the storage node and the electrode layer. This design enhances the structural integrity and performance of the memory device.

Career Highlights

Mansug Kang is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His role involves research and development in semiconductor technology, where he applies his expertise to create cutting-edge solutions. His contributions have not only advanced the company's product offerings but have also set new standards in the industry.

Collaborations

Mansug Kang has collaborated with notable colleagues, including Eunkee Hong and Seonghwee Cheong. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Mansug Kang's work in semiconductor technology exemplifies the spirit of innovation. His patents and contributions continue to shape the future of memory devices, making him a key figure in the field. His dedication to advancing technology is evident in his impressive portfolio of patents.

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