The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2015
Filed:
Feb. 09, 2012
Kyungmun Byun, Seoul, KR;
Byoungdeog Choi, Suwon-si, KR;
Eunkee Hong, Seongnam-si, KR;
Mansug Kang, Suwon-si, KR;
Kyungmun Byun, Seoul, KR;
Byoungdeog Choi, Suwon-si, KR;
Eunkee Hong, Seongnam-si, KR;
Mansug Kang, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of fabricating a semiconductor device includes providing a substrate including a first region and a second region, forming a first trench having a first width in the first region and a second trench having a second width in the second region, and the second width is greater than the first width. The method also includes forming a first insulation layer in the first and second trenches, removing the first insulation layer in the second trench to form a first insulation pattern that includes the first insulation layer remaining in the first trench, forming on the substrate a second insulation layer that fills the second trench, and the second insulation layer includes a different material from the first insulation layer.