The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2014
Filed:
Mar. 08, 2013
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Seonghwee Cheong, Suwon-si, KR;
Mansug Kang, Suwon-si, KR;
Joon Kim, Seoul, KR;
Kihong Nam, Seongnam-si, KR;
Gyuwan Choi, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor device with vertical channel transistors and a method of fabricating the same are provided. A method of fabricating the semiconductor device includes patterning a substrate to form a trench that defines an active region, forming a sacrificial pattern in a lower region of the trench, forming a spacer on an upper sidewall of the trench, recessing a top surface of the sacrificial pattern to form a window exposing a sidewall of the active region between the spacer and the sacrificial pattern, doping a sidewall of the trench through the window to form a doped region in the active region, and forming a wiring in the trench to be connected to the doped region.