The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Feb. 10, 2012
Applicants:
Kyungmun Byun, Seoul, KR;
Hyongsoo Kim, Hwaseong-si, KR;
Eunkee Hong, Sungnam-Shi, KR;
Mansug Kang, Suwon-si, KR;
Inventors:
Kyungmun Byun, Seoul, KR;
Hyongsoo Kim, Hwaseong-si, KR;
Eunkee Hong, Sungnam-Shi, KR;
Mansug Kang, Suwon-si, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/90 (2013.01); H01L 27/10852 (2013.01);
Abstract
A capacitor dielectric can be between the storage node and the electrode layer. A supporting pattern can be connected to the storage node, where the supporting pattern can include at least one first pattern and at least one second pattern layered on one another, where the first pattern can include a material having an etch selectivity with respect to the second pattern.