The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2017
Filed:
Jul. 07, 2015
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Taekjung Kim, Seoul, KR;
Myung-Ho Kong, Hwaseong-si, KR;
Heesook Park, Hwaseong-si, KR;
Youngwook Park, Osan-si, KR;
Mansug Kang, Suwon-si, KR;
Seonghwee Cheong, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
A semiconductor memory device can include a first conductive line crossing over a field isolation region and crossing over an active region of the device, where the first conductive line can include a first conductive pattern being doped, a second conductive pattern, and a metal-silicon-nitride pattern between the first and second conductive patterns and can be configured to provide a contact at a lower boundary of the metal-silicon-nitride pattern with the first conductive pattern and configured to provide a diffusion barrier at an upper boundary of the metal-silicon-nitride pattern with the second conductive pattern.