Hwaseong, South Korea

Heesook Park

This inventor holds 9 USPTO granted patents and 2 published patent applications. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2009-2020.

USPTO Granted Patents = 9 

% Patents Active = 100.0

Average Co-Inventor Count = 6.1

ph-index = 5

Forward Citations = 54(Granted Patents)


Location History:

  • Seoul, KR (2009 - 2011)
  • Hwasung-si, KR (2015 - 2016)
  • Hwaseong-si, KR (2015 - 2020)

Company Filing History:


Years Active: 2009-2020

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9 patents (USPTO):Explore Patents

Title: Heesook Park: Innovator in Semiconductor Technology

Introduction

Heesook Park is a prominent inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 9 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

One of Heesook Park's latest patents involves a semiconductor device that comprises a device region on a substrate, an interlayer dielectric layer on the device region, and a first interface layer on a side of the interlayer dielectric layer. This innovative design includes a low-k dielectric layer that is spaced apart from the interlayer dielectric layer across the first interface layer, which has a dielectric constant lower than that of the interlayer dielectric layer. Additionally, a conductive line is integrated within the low-k dielectric layer. The first interface layer consists of a first sub-interface layer in contact with the low-k dielectric layer and a second sub-interface layer in contact with the interlayer dielectric layer, with the second sub-interface layer exhibiting lower hydrogen permeability than the first.

Another notable patent is for a semiconductor device that includes a substrate and a capacitor electrically connected to it. This capacitor features a lower electrode, a dielectric layer on the lower electrode, and an upper electrode on the dielectric layer. The upper electrode is designed with a first electrode on the dielectric layer and a second electrode on the first electrode, ensuring that the first electrode, which contains metal oxynitride, is positioned between the dielectric layer and the second electrode.

Career Highlights

Heesook Park is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to push the boundaries of semiconductor technology and contribute to advancements in the industry.

Collaborations

Heesook Park has collaborated with notable coworkers, including Eun-Ok Lee and Nam-Gun Kim. Their combined expertise has fostered innovation and development in semiconductor technologies.

Conclusion

Heesook Park's contributions to semiconductor technology through his patents and work at Samsung Electronics Co., Ltd. highlight his role as a key innovator in the field. His advancements continue to influence the future of semiconductor devices and their applications.

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