The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2018
Filed:
Jul. 18, 2016
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jin-su Lee, Hwaseong-si, KR;
Gihee Cho, Seongnam-si, KR;
Dongkyun Park, Seoul, KR;
Hyun-Suk Lee, Suwon-si, KR;
Heesook Park, Hwaseong-si, KR;
Jongmyeong Lee, Seongnam-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor device is disclosed. The semiconductor device includes a substrate and capacitor electrically connected to the substrate. The capacitor includes a lower electrode, a dielectric layer disposed on the lower electrode, and an upper electrode disposed on the dielectric layer. The upper electrode includes a first electrode on the dielectric layer and a second electrode on the first electrode, such that the first electrode is disposed between the dielectric layer and the second electrode. The first electrode contains metal oxynitride having a formula of MON, in which an atomic ratio (y/x) of oxygen (O) to metallic element (M) is a value in the range from 0.5 to 2.