The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2020
Filed:
Jul. 05, 2018
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Jun Kwan Kim, Seoul, KR;
Sanghoon Ahn, Hwaseong-si, KR;
Kyu-Hee Han, Hwaseong-si, KR;
JaeWha Park, Yongin-si, KR;
Heesook Park, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided is a semiconductor device comprising a device region on a substrate, an interlayer dielectric layer on the device region, a first interface layer on a side of the interlayer dielectric layer, a low-k dielectric layer spaced apart from the interlayer dielectric layer across the first interface layer and having a dielectric constant less than that of the interlayer dielectric layer, and a conductive line in the low-k dielectric layer. The first interface layer comprises a first sub-interface layer in contact with the low-k dielectric layer, and a second sub-interface layer in contact with the interlayer dielectric layer. The second sub-interface layer has hydrogen permeability less than that of the first sub-interface layer.