The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2011
Filed:
Nov. 13, 2009
Heesook Park, Seoul, KR;
Jaehwa Park, Gyeonggi-Do, KR;
Janghee Lee, Seoul, KR;
Geumjung Seong, Yongin, KR;
Byunghak Lee, Gyeonggi-Do, KR;
Dongchan Lim, Gyeonggi-Do, KR;
Taeho Cha, Gyeonggi-Do, KR;
Heesook Park, Seoul, KR;
Jaehwa Park, Gyeonggi-Do, KR;
Janghee Lee, Seoul, KR;
Geumjung Seong, Yongin, KR;
Byunghak Lee, Gyeonggi-Do, KR;
Dongchan Lim, Gyeonggi-Do, KR;
Taeho Cha, Gyeonggi-Do, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
In one embodiment, a semiconductor device includes at least two stacked gate structures formed on a substrate. The two stacked gate structures each include a semiconductor layer and a metal layer over the semiconductor layer. The two stacked gate structures on the substrate are characterized by differential intermediate layers, one of the two structures including an ohmic layer and the other of the two structures not including an ohmic layer.