Hsinchu, Taiwan

Lu-An Chen

This inventor holds 22 USPTO granted patents and 2 published patent applications, primarily in Electrostatic Discharge Protection. Top assignees: United Microelectronics Corp., Novatek Microelectronics Corps.. Active years: 2013-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Lu-An Chen. Retrieved from https://idiyas.com/inventor/lu-an-chen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 22 

% Patents Active = 100.0

Average Co-Inventor Count = 2.8

ph-index = 4

Forward Citations = 30(Granted Patents)


Location History:

  • Keelung, TW (2013 - 2015)
  • Hsinchu, TW (2015)
  • Zhubei, TW (2016)
  • Hsinchou County, TW (2016)
  • Hsinchu County, TW (2014 - 2019)

Company Filing History:


Years Active: 2013-2019

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Areas of Expertise:
Electrostatic Discharge
Protection Circuit
Semiconductor Device
Control Circuit
Latch-Up Prevention
Transistor Structure
Stacked Protection
NMOS Transistor
Field Drift MOS
Protection Structure
Output Buffer
22 patents (USPTO):Explore Patents

Title: Lu-An Chen: Innovator in Electrostatic Discharge Protection

Introduction

Lu-An Chen, based in Hsinchu County, Taiwan, is a distinguished inventor known for his significant contributions to the field of electrostatic discharge (ESD) protection. With a remarkable portfolio of 22 patents, Chen is at the forefront of his industry, developing innovative solutions that enhance the safety and efficiency of electronic devices.

Latest Patents

Among Lu-An Chen's latest inventions are two notable patents:

1. **Electrostatic Discharge Protection Circuit** - This invention presents an ESD protection circuit that is electrically connected between a high voltage power line and a low voltage power line. The circuit features a bipolar junction transistor (BJT) with its collector linked to the high voltage line and its emitter and base connected to the low voltage line. Additionally, the circuit includes a trigger source connected between the base of the BJT and the high voltage power line, providing effective protection against electrical surges.

2. **Semiconductor Device for Electrostatic Discharge Protection** - This semiconductor device consists of a substrate with a gate positioned atop it, along with drain and source regions on either side of the gate. The device includes a first doped region within the drain and a complementary first well, ensuring that the conductivity types across the device effectively mitigate electrostatic discharge risks.

Career Highlights

Lu-An Chen has made impactful strides in his career, particularly through his work with renowned companies such as United Microelectronics Corporation and Novatek Microelectronics Corporation. His extensive experience in these organizations has enabled him to refine his expertise in semiconductor technology and develop groundbreaking inventions.

Collaborations

Throughout his professional journey, Chen has collaborated with notable peers, including Tien-Hao Tang and Tai-Hsiang Lai. These partnerships have fostered a creative environment that has contributed to the advancement of ESD protection technologies.

Conclusion

Lu-An Chen's innovative spirit and technical prowess have positioned him as an influential figure in the realm of electrostatic discharge protection. As he continues to develop and refine his inventions, his contributions will undoubtedly shape the future of electronics and increase the reliability of devices in a world increasingly dependent on technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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