The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2016
Filed:
Jul. 30, 2014
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Lu-An Chen, Hsinchu County, TW;
Tien-Hao Tang, Hsinchu, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/62 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0619 (2013.01); H01L 29/0692 (2013.01); H01L 29/086 (2013.01); H01L 29/0869 (2013.01); H01L 29/7816 (2013.01); H01L 29/0878 (2013.01); H01L 29/1095 (2013.01);
Abstract
A semiconductor device includes a substrate, a gate positioned on the substrate, a drain region and a source region formed in the substrate at two respectively sides of the gate, a first well region formed in the substrate, and a plurality of first doped islands formed in the source region. The drain region and the source region include a first conductivity, and the first well region and the first doped islands include a second conductivity. The source region is formed in the first well region, and the first doped islands are spaced apart from the first well region.