The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2015
Filed:
Feb. 17, 2014
United Microelectronics Corp., Hsin-Chu, TW;
Yi-Chun Chen, Pingtung County, TW;
Li-Cih Wang, Taoyuan County, TW;
Lu-An Chen, Hsinchu County, TW;
Tien-Hao Tang, Hsinchu, TW;
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
The electrostatic discharge protection structure includes an N-well disposed on a substrate, a P-well disposed on the substrate and adjacent to the N-well, a first doped region of N-type conductivity disposed in the N-well, a second doped region of N-type conductivity disposed in the N-well, a third doped region of P-type conductivity disposed in the N-well, a fifth doped region of P-type conductivity disposed in the P-well, a fourth doped region of N-type conductivity disposed between the third doped region and the fifth doped region in the P-well, an anode electrically connected to the first doped region and the second doped region, and a cathode electrically connected to the fourth doped region and the fifth doped region.