The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
Mar. 21, 2013
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Lu-An Chen, Hsinchu County, TW;
Tien-Hao Tang, Hsinchu, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/62 (2006.01); H01L 29/78 (2006.01); H01L 27/02 (2006.01); H01L 29/08 (2006.01); H01L 23/60 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78 (2013.01); H01L 27/0266 (2013.01); H01L 29/0847 (2013.01); H01L 23/60 (2013.01);
Abstract
A semiconductor device includes a substrate, a gate positioned on the substrate, a drain region and a source region formed at respective two sides of the gate in the substrate, at least a first doped region formed in the drain region, and at least a first well having the first doped region formed therein. The source region and the drain region include a first conductivity type, the first doped region and the first well include a second conductivity type, and the first conductivity type and the second conductivity type are complementary to each other.