San Jose, CA, United States of America

Lito De La Rama

USPTO Granted Patents = 12 

Average Co-Inventor Count = 3.7

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 2020-2025

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12 patents (USPTO):Explore Patents

Title: Lito De La Rama: Innovating 3D NAND Source Side Programming

Introduction:

In the constantly evolving field of memory technology, Lito De La Rama has made significant contributions with his groundbreaking patent on source side programming for 3D NAND. Based in San Jose, CA, Lito De La Rama is a key figure in the innovative strides being made in memory technologies. In this article, we will explore Lito De La Rama's patent, his career highlights, collaborations, and the impact he has made in the field.

Latest Patents:

Lito De La Rama holds one notable patent titled "Source Side Program, Method, and Apparatus for 3D NAND." This patent outlines a source side programming method and system that addresses potential failure triggers within a memory array. By detecting abnormal threshold voltage distributions in drain side select gates, the patent focuses on identifying and addressing bad trigger blocks that could cause failures in other blocks. This innovation demonstrates Lito De La Rama's expertise in memory technologies and showcases his ability to find practical solutions to potential issues.

Career Highlights:

Lito De La Rama's career has primarily revolved around his work at Sandisk Technologies Inc., a renowned company in the memory industry. While specific career milestones are not provided, De La Rama's patent indicates his active involvement and dedication to advancing memory technologies. Through his research and innovative techniques, he has played a significant role in driving the industry forward.

Collaborations:

Within Sandisk Technologies Inc., Lito De La Rama has collaborated with esteemed colleagues to advance memory technologies. Notable collaborators include Xiang Yang and Brian Murphy. These collaborations highlight the synergy and collective expertise that enable groundbreaking inventions and innovations to come to life. By working closely with such accomplished individuals, Lito De La Rama has been able to leverage their knowledge and contribute to the progression of the memory industry.

Conclusion:

Lito De La Rama's patent on source side programming for 3D NAND truly highlights his expertise and ingenuity in the field of memory technologies. His ability to identify and address potential issues within memory arrays demonstrates his commitment to enhancing performance and reliability. With his collaborative spirit and dedication to innovation, Lito De La Rama continues to make significant contributions to the industry. As the field of memory technologies continues to evolve, we can anticipate further breakthroughs from Lito De La Rama and his colleagues at Sandisk Technologies Inc.

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