The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2025

Filed:

Jul. 24, 2023
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Yi Song, San Jose, CA (US);

Jiahui Yuan, Fremont, CA (US);

Xiaochen Zhu, Milpitas, CA (US);

Lito De La Rama, San Jose, CA (US);

Assignee:

Sandisk Technologies, Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/02 (2006.01); G11C 29/52 (2006.01);
U.S. Cl.
CPC ...
G11C 29/021 (2013.01); G11C 29/022 (2013.01); G11C 29/52 (2013.01);
Abstract

A non-volatile memory system detects a memory operation failure. In response to the memory operation failure, the system determines whether adjusting an overdrive voltage applied to a word line avoids the memory operation failure. If adjusting the overdrive voltage applied to the word line avoids the memory operation failure, then future memory operations are performed by applying the adjusted overdrive voltage to the word line.


Find Patent Forward Citations

Song, Yi. (2025). Non-volatile memory with smart control of overdrive voltage (U.S. Patent No. 12406743). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12406743

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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