The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 23, 2024

Filed:

Jun. 23, 2022
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Yihang Liu, Santa Clara, CA (US);

Xiaochen Zhu, Milpitas, CA (US);

Lito De La Rama, San Jose, CA (US);

Feng Gao, San Jose, CA (US);

Assignee:

SanDisk Technologies LLC, Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/10 (2006.01); G11C 16/16 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/16 (2013.01); G11C 16/102 (2013.01); G11C 16/26 (2013.01); G11C 16/3404 (2013.01);
Abstract

To prevent loss of data due to a word line to memory hole short (or another defect), it is proposed to perform an erase process for a plurality of memory cells, detect that a subset of the plurality of memory cells are slow to erase, and prevent successfully programming for at least some of the memory cells that are slow to erase. This technique uses the erase process to predict future word line to memory hole shorts and prevent programming of memory cells predicted to have a future word line to memory hole short so no data will be lost when the short manifests.


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