Feng Gao

Title: Innovations by Inventor Feng Gao

Introduction

Feng Gao is a notable inventor based in Union City, CA (US). He has made significant contributions to the field of non-volatile memory technology, holding a total of 3 patents. His work focuses on optimizing memory operations to enhance performance and reliability.

Latest Patents

One of Feng Gao's latest patents is titled "Non-volatile memory with optimized operation sequence." This invention describes a non-volatile memory system that performs memory operations for multiple sub-blocks of a block in a specific order. The process begins with the slowest sub-block, which is more likely to fail, allowing for earlier identification of potential failures. This approach saves time and reduces the risk of disturbances during memory operations. Another significant patent is "Non-volatile memory with short prevention." This invention aims to prevent data loss caused by defects such as word line to memory hole shorts. The method involves performing an erase process for multiple memory cells, detecting slow erasure, and preventing programming of those cells to avoid future data loss.

Career Highlights

Feng Gao is currently employed at Sandisk Technologies Inc., where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of non-volatile memory systems.

Collaborations

Feng has collaborated with talented coworkers, including Yihang Liu and Xiaochen Zhu, contributing to the development of cutting-edge memory solutions.

Conclusion

Feng Gao's contributions to non-volatile memory technology demonstrate his commitment to innovation and excellence. His patents reflect a deep understanding of memory systems and a dedication to improving their reliability and performance.