The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 09, 2024

Filed:

May. 10, 2022
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Jiacen Guo, Sunnyvale, CA (US);

Xiaochen Zhu, Milpitas, CA (US);

Xiang Yang, Santa Clara, CA (US);

Lito De La Rama, San Jose, CA (US);

Yi Song, San Jose, CA (US);

Jiahui Yuan, Fremont, CA (US);

Assignee:

SanDisk Technologies LLC, Addison, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/28 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/28 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/3459 (2013.01);
Abstract

Technology is disclosed herein for a memory system that compensates for different programming speeds in two sets of memory cells when reading those two sets of memory cells. The memory system programs a group of the memory cells to one or more data states. In one aspect, the memory cells are not verified during programming. The group has a first set of memory cells that program at a first speed and a second set of memory cells that program at a second speed. The memory system reads the first set of the memory cells with a first set of read parameters and reads the second set of the memory cells with a second set of read parameters. The first set of read parameters are different from the second set of read parameters to compensate for the different programming speeds.


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