The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 15, 2024

Filed:

Mar. 31, 2022
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Xiaochen Zhu, Milpitas, CA (US);

Lito De La Rama, San Jose, CA (US);

Yi Song, San Jose, CA (US);

Jiacen Guo, Sunnyvale, CA (US);

Jiahui Yuan, Fremont, CA (US);

Assignee:

SanDisk Technoloiges LLC, Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G11C 11/56 (2006.01); G11C 16/04 (2006.01); G11C 16/14 (2006.01); G11C 16/34 (2006.01); H01L 25/065 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 16/0483 (2013.01); G11C 11/5671 (2013.01); G11C 16/14 (2013.01); G11C 16/3459 (2013.01); H01L 25/0657 (2013.01); H01L 2225/06562 (2013.01); H10B 43/27 (2023.02);
Abstract

A non-volatile memory system limits the amount of programming for a first type of group of non-volatile memory cells based on a first parameter such that a maximum number of programming pulses applied to the first type of group of non-volatile memory cells to program to the last data state after the first type of group of non-volatile memory cells completed programming to the other data states is X programming pulses. The non-volatile memory system limits the amount of programming for a second type of group of the non-volatile memory cells based on a second parameter such that a maximum number of programming pulses applied to the second type of group of non-volatile memory cells to program to the last data state after the second type of group of non-volatile memory cells completed programming to the other data states is Y programming pulses.


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