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For the Inventor, By the Inventor

Hillsborough, NJ, United States of America

LinLin Liu

This inventor holds 30 USPTO granted patents and 6 published patent applications and 4 EPO patents, primarily in GaN Semiconductor Technology. Top assignees: Power Integrations, Inc., Emcore Corporation, Velox Semiconductor Corporation. Active years: 2006-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: LinLin Liu. Retrieved from https://idiyas.com/inventor/linlin-liu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 30 

% Patents Active = 66.7

 

Average Co-Inventor Count = 3.6

ph-index = 8

Forward Citations = 226(Granted Patents)


Company Filing History:

goldMedal21 out of 1,030 
 
Power Integrations, Inc.
 patents
silverMedal5 out of 205 
 
Emcore Corporation
 patents
bronzeMedal4 out of 7 
 
Velox Semiconductor Corporation
 patents

Years Active: 2006-2023

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Areas of Expertise:
GaN Devices
High-Electron-Mobility Transistors
HFET
Transistor Fabrication
Protective Insulator
Layout Design
PIN Diode
Gallium Nitride
Dielectric Delamination
Metal Peeling
Zinc Diffusion
Lateral Conduction
30 patents (USPTO):Explore Patents
1. 11776815 - Asymmetrical plug technique for GaN devices (2023-10-03),
2. 11721753 - Method of fabricating a transistor (2023-08-08),
3. 11373873 - Asymmetrical plug technique for GaN devices (2022-06-28),
4. 11075294 - Protective insulator for HFET devices (2021-07-27),
5. 10665463 - Asymmetrical plug technique for GaN devices (2020-05-26),
6. 10629719 - Protective insulator for HFET devices (2020-04-21),
7. 10204791 - Contact plug for high-voltage devices (2019-02-12),
8. 10121885 - Protective insulator for HFET devices (2018-11-06),
9. 9722063 - Protective insulator for HFET devices (2017-08-01),
10. 9525055 - High-electron-mobility transistors (2016-12-20),
11. 9437688 - High-quality GaN high-voltage HFETs on silicon (2016-09-06),
12. 9343541 - Method of fabricating GaN high voltage HFET with passivation plus gate dielectric multilayer structure (2016-05-17),
13. 9306014 - High-electron-mobility transistors (2016-04-05),
14. 9147734 - High quality GaN high-voltage HFETs on silicon (2015-09-29),
15. 8729565 - Layout design for a high power, GaN-based FET having interdigitated gate, source and drain electrodes (2014-05-20),

Title: LinLin Liu: Pioneering Inventor from Hillsborough

Introduction: LinLin Liu is a trailblazing inventor hailing from Hillsborough, NJ. She is known for her innovative spirit and groundbreaking contributions to the field of technology.

Latest Patents: LinLin Liu holds several patents in the areas of artificial intelligence, renewable energy, and biotechnology. Her most recent patents focus on sustainable solutions for environmental challenges.

Career Highlights: With a career spanning over two decades, LinLin Liu has worked with top research institutions and leading tech companies. Her expertise lies in developing cutting-edge technologies that have a positive impact on society.

Collaborations: LinLin Liu has collaborated with renowned scientists, engineers, and researchers from around the globe. Her collaborative projects have resulted in transformative inventions that have received international recognition.

Conclusion: LinLin Liu's dedication to innovation and her passion for creating a better world through technology make her a true pioneer in the field of inventions. Her work continues to inspire the next generation of inventors and innovators.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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