Ling Wu

Title: Innovations of Inventor Ling Wu in Memory Device Technology

Introduction

Ling Wu, an esteemed inventor based in Singapore, has made significant contributions to the field of memory device technology. With a total of six patents to his name, his inventions focus on advancing the efficiency and reliability of non-volatile memory devices.

Latest Patents

One of Ling Wu's latest innovations is a reliable non-volatile memory device. This invention details a device and method for forming said devices, which includes providing a substrate with a memory cell region. At least first and second memory cells are created within this region, each formed by establishing a split gate structure. The first gate acts as a storage gate, featuring a control gate above a floating gate, while the second gate functions as a wordline. Notably, re-oxidized layers are constructed on the sidewalls of the control gate, extending from the top to the bottom. Furthermore, source and drain (S/D) regions are strategically positioned adjacent to the gates, with the first and second gates coupled in series. An erase gate is also incorporated over the common S/D region, showcasing an innovative approach to memory device architecture.

Additionally, Wu's patent on integrated circuits introduces methods of forming such circuits and determining the electrical thickness of gate dielectric layers. An exemplary integrated circuit consists of a semiconductor substrate featuring an active region, complemented by a first gate electrode structure containing gate dielectric layers. This design demonstrates a sophisticated integration of components, aiming to enhance performance in semiconductor applications.

Career Highlights

Ling Wu's impressive career has seen him contribute his expertise to notable companies such as Globalfoundries Singapore Pte. Ltd. and United Microelectronics Corporation. His work at these institutions has provided him with the platform to refine his inventions and push the boundaries of memory technology.

Collaborations

Throughout his professional journey, Wu has collaborated with several esteemed colleagues, including Sung Mun Jung and Jianbo Yang. These partnerships have been pivotal in driving innovation and advancing research within the memory device sector.

Conclusion

Ling Wu's contributions to memory device technology exemplify his dedication to innovation in the field. With his patents addressing critical challenges and advancing integrated circuit design, he continues to pave the way for future developments in non-volatile memory devices.