The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2016
Filed:
Jun. 01, 2015
United Microelectronics Corp., Hsinchu, TW;
Qiu-Ji Zhao, Singapore, SG;
Ling Wu, Singapore, SG;
Wei Meng, Singapore, SG;
Zhi-Hui Jiao, Singapore, SG;
Zhi-Guo Li, Singapore, SG;
Chi Ren, Singapore, SG;
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Abstract
A semiconductor device includes a substrate, a plurality of memory cells, a logic gate electrode and a high-voltage gate electrode. The substrate at least includes a memory area, a high-voltage area and a logic area. The memory cells are disposed in the memory area. The logic gate electrode is disposed on the logic area. The high-voltage gate electrode has a first portion and a second portion in contact with each other and stacked on the high-voltage area. The high-voltage gate electrode has a thickness substantially greater than that of the logic gate electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile