Li-Te Chang

This inventor holds 19 USPTO granted patents and 19 published patent applications, primarily in Memory Device Management. Top assignee: Micron Technology Incorporated. Active years: 2023-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Li-Te Chang. Retrieved from https://idiyas.com/inventor/li-te-chang-xbdk5eed

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 19 (Patent Applications = 19)

% Patents Active = 94.7

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 4(Granted Patents)

Location History:

San Jose, CA (US) (2023 - 2024)
Boise, ID (US) (2024)

Company Filing History:

19 out of 39,222

Micron Technology Incorporated

patents

Years Active: 2023-2026

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Areas of Expertise:

Read Level Voltage

Memory Cells

Error Avoidance

Machine Learning

Dynamic Calibration

Power Loss Detection

Program Voltage Adjustment

Integrity Scanning

Refresh Operations

Adaptive Scanning

Read Window Management

Health Monitoring

19 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12749541 - Cascade model for determining read level voltage offsets based on wordline group memory cells (2026-09-29),

2. 12718895 - Read disturb management (2026-08-25),

3. 12688904 - Adaptive error avoidance in the memory devices (2026-07-21),

4. 12572418 - Machine-learning-based system health monitoring of a memory device (2026-03-10),

5. 12517816 - Model based error avoidance (2026-01-06),

6. 12517659 - Adaptive scanning of memory devices with supervised learning (2026-01-06),

7. 12505899 - Power loss error detection using partial block handling (2025-12-23),

8. 12475058 - Error avoidance for partially programmed blocks of a memory device (2025-11-18),

9. 12431215 - Dynamic read calibration (2025-09-30),

10. 12394495 - Adaptive integrity scan in a memory sub-system (2025-08-19),

11. 12386515 - Modification of program voltage level with read or program-verify adjustment for improving reliability in memory devices (2025-08-12),

12. 12248697 - Dynamic read level trim selection for scan operations of memory devices (2025-03-11),

13. 12198777 - Read window management in a memory system (2025-01-14),

14. 12073905 - Adaptive error avoidance in the memory devices (2024-08-27),

15. 12051471 - Read disturb management (2024-07-30),

Title: Inventor Li-Te Chang: Revolutionizing Technology

Introduction: Li-Te Chang is a pioneering inventor based in San Jose, CA, known for her groundbreaking contributions to the field of technology.

Latest Patents: Li-Te Chang holds several patents in the areas of artificial intelligence, machine learning, and robotics, showcasing her innovative mindset and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Li-Te Chang has worked with leading tech companies, research institutions, and universities to develop cutting-edge technologies that have reshaped industries.

Collaborations: Throughout her career, Li-Te Chang has collaborated with top engineers, scientists, and researchers to bring her inventions to life, fostering a culture of innovation and creativity in the tech world.

Conclusion: Li-Te Chang's passion for innovation and her relentless drive to push the boundaries of technology make her a true trailblazer in the field of inventions. Her work continues to inspire future generations of inventors to think outside the box and create solutions that shape the world we live in.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

19 patents pending: