The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
Jan. 24, 2024
Micron Technology, Inc., Boise, ID (US);
Peng Zhang, Los Altos, CA (US);
Lei Lin, Fremont, CA (US);
Hanping Chen, San Jose, CA (US);
Li-Te Chang, San Jose, CA (US);
Zhengang Chen, San Jose, CA (US);
Murong Lang, San Jose, CA (US);
Zhenming Zhou, San Jose, CA (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A method for receiving a request for performing a programming operation on one or more memory blocks of a memory device, identifying a value of a media endurance metric associated with the one or more memory blocks, determining a programming voltage offset corresponding to the value of the media endurance metric, and performing, using the programming voltage offset, the programming operation on the one or more memory blocks. The method further includes identifying a program-verify voltage level associated with the one or more memory blocks, determining a program-verify voltage offset associated with the program-verify voltage level and the value of the media endurance metric, and performing, using the program-verify voltage level and the program-verify voltage offset, a program-verify operation on the one or more memory blocks.