The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2025
Filed:
May. 23, 2024
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/10 (2016.01); G06F 12/06 (2006.01); G06F 12/1027 (2016.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G06F 12/1027 (2013.01); G06F 12/0692 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01); G11C 16/349 (2013.01); G06F 2212/68 (2013.01); G11C 16/0483 (2013.01);
Abstract
A block of a memory device is identified. A threshold voltage offset corresponding to a wordline associated with the block is identified based on a threshold voltage offset table. The threshold voltage offset table corresponds to at least one of: a value of a media state metric associated with the block, a wordline group of the wordline, or a difference between the wordline and a boundary wordline of the block. A read operations is performed on the block using a read level voltage modified by the threshold voltage offset, wherein the read level voltage is associated with the block.