The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2025

Filed:

Nov. 27, 2023
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Li-Te Chang, San Jose, CA (US);

Aaron Lee, Sunnyvale, CA (US);

Zhenming Zhou, San Jose, CA (US);

Murong Lang, San Jose, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/28 (2006.01); G11C 16/34 (2006.01); G11C 29/52 (2006.01);
U.S. Cl.
CPC ...
G11C 29/52 (2013.01); G11C 16/08 (2013.01); G11C 16/28 (2013.01); G11C 16/3404 (2013.01);
Abstract

A system includes a memory device with multiple cells and a processing device to perform operations including: identifying a group of wordlines, each connected to a subset of cells, and assigning a specified charge loss classification value to that group. The operations can also include selecting a page level, selecting a first set of cells, determining, for the first set of cells, a value of a first data state metric, identifying a second set of cells charged to a specified charge state, and determining a value of a second data state metric. The operations can also include maintaining a skew counter of the second data state metric, identifying and updating a read reference voltage offset, as well as applying the updated read reference voltage offset in a read operation.


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