Li-Ping Huang

Title: Innovations of Li-Ping Huang in Memory Circuit Design

Introduction

Li-Ping Huang is a prominent inventor based in Miaoli County, Taiwan. He has made significant contributions to the field of memory circuit design, holding a total of 12 patents. His work focuses on advanced technologies that enhance the performance and efficiency of memory systems.

Latest Patents

Among his latest patents is the "Spin-orbit torque magnetic random access memory circuit and layout thereof." This invention provides a circuit design that includes a read transistor pair and a write transistor pair, along with a SOT memory cell featuring a magnetic tunnel junction (MTJ) and a SOT layer. The configuration allows for improved data storage and retrieval processes. Another notable patent is the "Layout pattern of static random access memory and the forming method thereof." This invention outlines a layout pattern for SRAM that includes various gate structures and transistors, optimizing the design for better performance.

Career Highlights

Li-Ping Huang works at United Microelectronics Corporation, a leading company in the semiconductor industry. His innovative designs have contributed to the advancement of memory technologies, making a significant impact on the field.

Collaborations

Li-Ping collaborates with talented individuals such as Chun-Hsien Huang and Yu-Tse Kuo, who contribute to the development of cutting-edge technologies in memory circuits.

Conclusion

Li-Ping Huang's contributions to memory circuit design through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence advancements in memory technology, showcasing the importance of innovation in this area.