The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2018
Filed:
Jun. 13, 2017
United Microelectronics Corp., Hsinchu, TW;
Chun-Hsien Huang, Tainan, TW;
Ching-Cheng Lung, Tainan, TW;
Yu-Tse Kuo, Tainan, TW;
Li-Ping Huang, Miaoli County, TW;
Chun-Yen Tseng, Tainan, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A memory device includes a pickup area extending along a first direction. The pickup area includes at least one N-pickup structure, distributing along an N-pickup line extending at the first direction. At least one P-pickup structure distributes by alternating with the N-pickup structure at the first direction and interleaves with the N-pickup structure at a second direction. The second direction is perpendicular to the first direction. Dummy pickup structure distributes along the first direction, opposite to the P-pickup structure with respect to the N-pickup line. Further, a cell area is beside the pickup area. The SRAM cells in the cell area form cell rows extending along the second direction. Each SRAM cell covers one N-type well region along the second direction and two P-type well regions along the second direction to sandwich the N-type well region. The N-pickup/P-pickup structures respectively provide first/second substrate voltage to the N-type/P-type well regions.