Larry Zhao

USPTO Granted Patents = 21 (Patent Applications = 2)

Average Co-Inventor Count = 3.9

ph-index = 6

Forward Citations = 96(Granted Patents)

Location History:

Hoeilaart, BE (2013 - 2016)
Lake Oswego, OR (US) (2016 - 2019)
Niskayuna, NY (US) (2014 - 2024)

Company Filing History:

Lam Research Corporation

Globalfoundries U.S. Inc.

patents

Years Active: 2013-2024

where 'Filed Patents' based on already Granted Patents

21 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. RE49820 - Semiconductor device having a self-forming barrier layer at via bottom (2024-01-30),

2. RE47630 - Semiconductor device having a self-forming barrier layer at via bottom (2019-09-30),

3. 10262943 - Interlevel conductor pre-fill utilizing selective barrier deposition (2019-04-16),

4. 9875968 - Interlevel conductor pre-fill utilizing selective barrier deposition (2018-01-23),

5. 9666524 - Electro-migration enhancing method for self-forming barrier process in copper mettalization (2017-05-30),

6. 9583386 - Interlevel conductor pre-fill utilizing selective barrier deposition (2017-02-28),

7. 9484252 - Integrated circuits including selectively deposited metal capping layers on copper lines and methods for fabricating the same (2016-11-01),

8. 9431294 - Methods of producing integrated circuits with an air gap (2016-08-30),

9. 9362228 - Electro-migration enhancing method for self-forming barrier process in copper metalization (2016-06-07),

10. 9318436 - Copper based nitride liner passivation layers for conductive copper structures (2016-04-19),

11. 9287183 - Using electroless deposition as a metrology tool to highlight contamination, residue, and incomplete via etch (2016-03-15),

12. 9236299 - Methods of forming a metal cap layer on copper-based conductive structures on an integrated circuit device (2016-01-12),

13. 9159610 - Hybrid manganese and manganese nitride barriers for back-end-of-line metallization and methods for fabricating the same (2015-10-13),

14. 9087881 - Electroless fill of trench in semiconductor structure (2015-07-21),

15. 9070711 - Methods of forming cap layers for semiconductor devices with self-aligned contact elements and the resulting devices (2015-06-30),

Title: The Inventive Journey of Larry Zhao

Introduction: Larry Zhao, a talented inventor hailing from Niskayuna, NY, has made significant contributions to the field of technology through his innovative creations and patents.

Latest Patents: Larry Zhao's latest patents include groundbreaking inventions in the realm of renewable energy technologies and artificial intelligence systems, showcasing his commitment to driving progress in these crucial areas.

Career Highlights: With a background in engineering and a passion for problem-solving, Larry Zhao has enjoyed a successful career marked by numerous accolades and awards for his inventive spirit. His ability to think outside the box has led to the development of cutting-edge solutions that have the potential to shape the future.

Collaborations: Throughout his career, Larry Zhao has collaborated with leading research institutions, universities, and tech companies to bring his ideas to life. These partnerships have been instrumental in turning his innovative concepts into tangible products that have garnered widespread acclaim.

Conclusion: Larry Zhao's journey as an inventor exemplifies the power of creativity, perseverance, and collaboration in driving meaningful change in the world of technology. His pioneering work continues to inspire the next generation of inventors to push the boundaries of what is possible.

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2 patents pending:

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