The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Mar. 07, 2014
Globalfoundries Inc., Grand Cayman, KY;
Xunyuan Zhang, Albany, NY (US);
Hoon Kim, Clifton Park, NY (US);
Christian Witt, Woodbridge, CT (US);
Larry Zhao, Hoeilaart, BE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
One method includes forming a barrier layer in a trench/opening in an insulating material, forming a first region of a copper material above the barrier layer, forming a metal layer in the trench/opening on the first region of copper material, forming a second region of copper material on the metal layer, performing at least one CMP process to remove any materials positioned above a planarized upper surface of the layer of insulating material outside of the trench/opening so as to thereby define a structure comprised of the metal layer positioned between the first and second regions of copper material, forming a dielectric cap layer above the layer of insulating material and above the structure, and performing a metal diffusion anneal process to form a metal cap layer adjacent at least the upper surface of a conductive copper structure.