The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2015
Filed:
Mar. 05, 2013
Globalfoundries Inc., Grand Cayman, KY;
Sean X. Lin, Watervliet, NY (US);
Xunyuan Zhang, Albany, NY (US);
Ming He, Slingerlands, NY (US);
Larry Zhao, Niskayuna, NY (US);
John Iacoponi, Saratoga Springs, NY (US);
Kunaljeet Tanwar, Slingerlands, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
A trench in an inter-layer dielectric formed on a semiconductor substrate is defined by a bottom and sidewalls. A copper barrier lines the trench with a copper-growth-promoting liner over the barrier. The trench has bulk copper filling it, and includes voids in the copper. The copper with voids is removed, including from the sidewalls, leaving a void-free copper portion at the bottom. Immersion in an electroless copper bath promotes upward growth of copper on top of the void-free copper portion without inward sidewall copper growth, resulting in a void-free copper fill of the trench.