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For the Inventor, By the Inventor

Palo Alto, CA, United States of America

Kyunghoon Min

USPTO Granted Patents = 10

Average Co-Inventor Count = 5.9

ph-index = 2

Forward Citations = 10(Granted Patents)


Company Filing History:

goldMedal10 out of 1,075 
 
Spansion Llc.
 patents

Years Active: 2009-2014

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10 patents (USPTO):
1. 8748972 - Flash memory devices and methods for fabricating same (2014-06-10),
2. 8486782 - Flash memory devices and methods for fabricating the same (2013-07-16),
3. 8445372 - Selective silicide formation using resist etch back (2013-05-21),
4. 8183623 - Dual charge storage node memory device and methods for fabricating such device (2012-05-22),
5. 7915123 - Dual charge storage node memory device and methods for fabricating such device (2011-03-29),
6. 7880221 - Forming metal-semiconductor films having different thicknesses within different regions of an electronic device (2011-02-01),
7. 7785965 - Dual storage node memory devices and methods for fabricating the same (2010-08-31),
8. 7691751 - Selective silicide formation using resist etchback (2010-04-06),
9. 7622389 - Selective contact formation using masking and resist patterning techniques (2009-11-24),
10. 7482217 - Forming metal-semiconductor films having different thicknesses within different regions of an electronic device (2009-01-27),

Title: The Innovations of Kyunghoon Min

Introduction

Kyunghoon Min is a prominent inventor based in Palo Alto, CA, known for his significant contributions to the field of flash memory technology. With a total of 10 patents to his name, Min has made a substantial impact on the development of memory devices.

Latest Patents

One of his latest patents focuses on flash memory devices and methods for fabricating the same. This invention outlines a method for creating a memory device that includes the fabrication of a first gate stack and a second gate stack overlying a substrate. A trench is etched into the substrate between these gate stacks, and a first impurity doped region is formed within the substrate beneath the trench. The trench is then filled at least partially with a conductive material, enhancing the functionality of the memory device.

Career Highlights

Kyunghoon Min has established a successful career at Spansion LLC, where he has been instrumental in advancing flash memory technology. His innovative approaches have led to the development of more efficient and reliable memory devices, which are crucial in today's technology-driven world.

Collaborations

Throughout his career, Min has collaborated with notable professionals in the field, including Hiroyuki Kinoshita and Ning Cheng. These partnerships have fostered a creative environment that has led to groundbreaking advancements in memory technology.

Conclusion

Kyunghoon Min's contributions to the field of flash memory technology are noteworthy and have significantly influenced the industry. His innovative patents and collaborations highlight his role as a leading inventor in this vital area of technology.

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