The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2013
Filed:
Dec. 22, 2009
Kyunghoon Min, Palo Alto, CA (US);
Angela Hui, Fremont, CA (US);
Hiroyuki Kinoshita, San Jose, CA (US);
Ning Cheng, San Jose, CA (US);
Mark Chang, Los Altos, CA (US);
Kyunghoon Min, Palo Alto, CA (US);
Angela Hui, Fremont, CA (US);
Hiroyuki Kinoshita, San Jose, CA (US);
Ning Cheng, San Jose, CA (US);
Mark Chang, Los Altos, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
Methods of selectively forming metal silicides on a memory device are provided. The methods can include forming a mask layer over the memory device; forming a patterned resist over the mask layer; removing upper portions of the patterned resist; forming a patterned mask layer by removing portions of the mask layer that are not covered by the patterned resist; and forming metal silicides on the memory device by a chemical reaction of a metal layer formed on the memory device with portions of the memory device that are not covered by the patterned mask layer. By preventing silicidation of underlying silicon containing layers/components of the memory device that are covered by the patterned mask layer, the methods can selectively form the metal silicides on the desired portions of the memory device.