The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2009
Filed:
Dec. 03, 2007
Eunha Kim, Menlo Park, CA (US);
Wen Yu, Freemont, CA (US);
Minh-van Ngo, Fremont, CA (US);
Kyunghoon Min, Palo Alto, CA (US);
Hiu-yung Wong, Sunnyvale, CA (US);
Eunha Kim, Menlo Park, CA (US);
Wen Yu, Freemont, CA (US);
Minh-Van Ngo, Fremont, CA (US);
Kyunghoon Min, Palo Alto, CA (US);
Hiu-Yung Wong, Sunnyvale, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
A method of forming an electronic device is provided that includes selectively implanting ions into a workpiece, wherein ions are implanted into a first region of the workpiece that includes a semiconductor material, while substantially none of the ions are implanted into a second region of the workpiece that also includes a semiconductor material. The method further includes depositing a metal-containing film over the first region and the second region after selectively implanting, and then reacting the metal-containing film with the semiconductor material to form a first metal-semiconductor film within the first region and a second metal-semiconductor film within the second region. The first metal-semiconductor film has a first thickness and the second metal-semiconductor film has a second thickness that is different from the first thickness.