The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2013
Filed:
Dec. 22, 2006
Ning Cheng, San Jose, CA (US);
Fred Cheung, San Jose, CA (US);
Ashot Melik-martirosian, Sunnyvale, CA (US);
Kyunghoon Min, Palo Alto, CA (US);
Michael Brennan, Campbell, CA (US);
Hiroyuki Kinoshita, San Jose, CA (US);
Ning Cheng, San Jose, CA (US);
Fred Cheung, San Jose, CA (US);
Ashot Melik-Martirosian, Sunnyvale, CA (US);
Kyunghoon Min, Palo Alto, CA (US);
Michael Brennan, Campbell, CA (US);
Hiroyuki Kinoshita, San Jose, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
Flash memory devices and methods for fabricating the same are provided. In accordance with an exemplary embodiment of the invention, a method for fabricating a memory device comprises the steps of fabricating a first gate stack and a second gate stack overlying a substrate. A trench is etched into the substrate between the first gate stack and the second gate stack and a first impurity doped region is formed within the substrate underlying the trench. The trench is filled at least partially with a conductive material.